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SI7113ADN-T1-GE3 Supplier in Europe - Bulk & OEM Pricing MOSFETs
SI7113ADN-T1-GE3 is a MOSFETs component by Vishay Semiconductors. In stock 12000 units available. From €1.000. Request a quote or contact info@globx.eu for fast European delivery.
Technical specification:
SI7113ADN-T1-GE3SI7113ADN-T1-GE3 Overview
The SI7113ADN-T1-GE3 is a P-channel 100 V (D-S) TrenchFET power MOSFET from Vishay Siliconix in a single PowerPAK 1212-8 package, rated at -100 V with 0.132 Ω maximum on-resistance at VGS = -10 V and -10.8 A continuous drain current. As a P-channel device it switches on the high side against a positive rail, which makes it a compact choice for load switches, power-path control and active-clamp stages without the level-shifting a high-side N-channel would need.
On-resistance is 0.186 Ω at VGS = -4.5 V for logic-level drive, gate charge is a low 5.65 nC typical, and the part handles up to 27.8 W (TC = 25 °C) across a -55 °C to +150 °C junction range. The leadless PowerPAK 1212-8 body measures just 3.3 mm by 3.3 mm, and the GE3 suffix denotes a lead (Pb)-free and halogen-free finish supplied on tape and reel.
Typical applications
- Active clamp in intermediate DC/DC power supplies
- LED lighting drivers
- High-side load switches and power-path control
- Reverse-polarity and inrush protection on positive rails
Key specifications
- Configuration: Single P-channel MOSFET, TrenchFET
- Drain-source voltage: -100 V
- On-resistance (max): 0.132 Ω at VGS = -10 V; 0.186 Ω at -4.5 V
- Continuous drain current: -10.8 A (TC = 25 °C)
- Gate-source voltage: ±20 V; VGS(th) -2.6 V max
- Gate charge: 5.65 nC typical
- Power dissipation: 27.8 W (TC = 25 °C)
- Package: PowerPAK 1212-8 (3.3 mm x 3.3 mm, leadless, surface mount)
- Temperature: -55 °C to +150 °C junction and storage
- Compliance: Lead (Pb)-free and halogen-free, 100 % Rg and UIS tested
- Status: Active
As a P-channel power device the SI7113ADN-T1-GE3 trades higher on-resistance for simpler high-side drive; where board space and efficiency matter more, designers weigh it against an N-channel switch with a gate driver, a trade-off covered in our guide to MOSFET and IGBT selection. When a specific power MOSFET is hard to find on the franchised shelf, our guide to second sourcing electronic components explains how to qualify verified stock safely.
GlobX supplies the SI7113ADN-T1-GE3 to OEM and EMS teams across Europe through a verified global supplier network, with ISO 9001 incoming inspection and anti-counterfeit checks, full traceability and a certificate of conformance on request. Request a quote with your quantity and date-code requirements and we will respond within 24 hours.
Pricing & Availability for SI7113ADN-T1-GE3
Products are delivered in packages of 3000 pieces each.
| DC / COO | QTY | IN STOCK | UNIT PRICE |
|---|---|---|---|
| 1 | (12000) | €1.000 | |
| - | (12000) | - | |
| - | (12000) | - |
Price Table (EUR)
| Quantity | Unit Price | EXT Price |
|---|---|---|
| 1 | 1,01 € | - |
| - | - | |
| - | - |
Other components by Vishay Semiconductors
Why Source SI7113ADN-T1-GE3 from GlobX
FAQs
Frequently Asked Questions about SI7113ADN-T1-GE3by Vishay Semiconductors
What is SI7113ADN-T1-GE3?
SI7113ADN-T1-GE3 is a P-channel 100 V TrenchFET power MOSFET from Vishay Siliconix in a single PowerPAK 1212-8 package. It is rated at -100 V drain-source with a maximum on-resistance of 0.132 Ohm at VGS = -10 V and -10.8 A continuous drain current. As a P-channel device it is used for high-side load switching, power-path control and active-clamp stages. The GE3 suffix means it is lead (Pb)-free and halogen-free, supplied on tape and reel.
What are the key ratings of SI7113ADN-T1-GE3?
The SI7113ADN-T1-GE3 is rated at -100 V drain-source with a gate-source rating of +/-20 V. Maximum on-resistance is 0.132 Ohm at VGS = -10 V and 0.186 Ohm at -4.5 V, continuous drain current is -10.8 A at TC = 25 C, and typical gate charge is 5.65 nC. Maximum power dissipation is 27.8 W at TC = 25 C, the gate threshold voltage is -2.6 V maximum, and the operating junction range is -55 C to +150 C.
What package does SI7113ADN-T1-GE3 use?
The SI7113ADN-T1-GE3 uses the PowerPAK 1212-8 package, a leadless surface-mount power package measuring 3.3 mm by 3.3 mm with 8 pads, including a large drain pad on the underside for heat transfer. The T1 suffix indicates tape and reel packaging and the GE3 suffix denotes a lead (Pb)-free and halogen-free finish. The compact footprint suits space-constrained DC/DC and load-switch designs.
Is SI7113ADN-T1-GE3 a P-channel or N-channel MOSFET?
The SI7113ADN-T1-GE3 is a P-channel MOSFET. A P-channel device turns on when its gate is pulled below the source, which makes it convenient for high-side switching against a positive supply rail without the gate-driver and level-shifting a high-side N-channel device would require. The trade-off is a higher on-resistance for a given die size, so it is chosen where drive simplicity and board space matter more than the lowest possible conduction loss.
Is SI7113ADN-T1-GE3 still in production?
Yes. The SI7113ADN-T1-GE3 is an active part; its datasheet was last revised in September 2024 and franchised distributors list it with active status. Because it is a specialised P-channel 100 V power MOSFET, availability can still tighten during allocation, which is where an independent distributor helps. GlobX sources verified stock across Europe with full traceability when the part is hard to find through franchised channels.
Is SI7113ADN-T1-GE3 available at GlobX?
Yes. GlobX supplies the SI7113ADN-T1-GE3 to OEM and EMS customers across Europe through a verified global supplier network, with ISO 9001 incoming inspection, anti-counterfeit checks and full traceability, plus a certificate of conformance on request. Whether you need production quantities or a hard-to-find date code, GlobX returns quotes within 24 hours.