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SQ4532AEY-T1_BE3 Supplier in Europe - Bulk & OEM Pricing MOSFETs
SQ4532AEY-T1_BE3 is a MOSFETs component by Vishay. In stock 5000 units available. From €1.000. Request a quote or contact info@globx.eu for fast European delivery.
Technical specification:
SQ4532AEY-T1_BE3SQ4532AEY-T1_BE3 Overview
The SQ4532AEY-T1_BE3 is Vishay Siliconix's automotive complementary MOSFET pair supplied with the BE3 suffix, which denotes an alternate manufacturing location. It carries one N-channel and one P-channel TrenchFET power MOSFET in a single SO-8 package, both rated at 30 V, with 7.3 A (N-channel) and -5.3 A (P-channel) continuous drain current at TC = 25 °C. The silicon, the datasheet and every electrical rating are identical to the SQ4532AEY-T1_GE3; only the fab and country of origin differ.
BE3 vs GE3: what the suffix actually means
Vishay's low-voltage MOSFET ordering codes split into three parts. T1 is tape and reel packaging. E3 marks a lead (Pb)-free part. GE3 marks a part that is lead-free and halogen-free, which Vishay calls Green. BE3 is also Green, built to the same specification, but at an alternate manufacturing location. A BE3 part can be used to replace a GE3 or E3 part: it is a form, fit and function equivalent, not a different device. If your approved vendor list names the SQ4532AEY-T1_GE3, the BE3 is the same die with a different origin.
Last time buy: the BE3 does not escape the end of life
This is the detail that catches buyers out. Vishay product termination notice PTN-SIL-013-2026, issued 19 February 2026, lists both SQ4532AEY-T1_GE3 and SQ4532AEY-T1_BE3 as affected. Distributors list the BE3 as a substitute for the GE3, so it looks like a safe second source, but both share the same last time buy date of 23 August 2026 and the same last time ship date of 22 February 2027. Moving from GE3 to BE3 buys stock, not time.
The change itself is benign: the family is converting from gold (Au) to copper (Cu) bond wire for materials standardisation, and the replacement ordering code is SQ4532CEY-T1_GE3. Vishay states the replacement uses identical silicon technology and the same silicon die design, that the wafer fab location does not change, and that device performance in the application will not be impacted. AEC-Q101 qualification data for the replacement is available and PPAP can be supplied on request. Our guides to second sourcing electronic components and sourcing obsolete electronic components cover how to verify an alternate suffix and how to plan a last-time-buy properly.
Typical applications
- Automotive load switches and high-side/low-side drive on 12 V rails, where the 30 V rating gives headroom over nominal battery voltage
- Body control modules, interior lighting and HVAC actuator drive
- Compact half-bridge and H-bridge legs for small DC motors
- Reverse-polarity and power-path protection needing both polarities in one footprint
- Builds where the GE3 suffix is unavailable and an alternate-origin, form-fit-function equivalent is acceptable
Key specifications
- Configuration: Complementary N-channel plus P-channel MOSFET pair (dual), TrenchFET
- Drain-source voltage: 30 V (N-channel) / -30 V (P-channel)
- On-resistance (max): 0.031 Ω N-channel, 0.070 Ω P-channel at VGS = ±10 V (0.042 Ω / 0.190 Ω at 4.5 V)
- Continuous drain current: 7.3 A (N-channel) / -5.3 A (P-channel) at TC = 25 °C
- Gate-source voltage: ±20 V
- Power dissipation: 3.3 W
- Package: SO-8 Dual (8-SOIC, 3.90 mm body), surface mount
- Temperature: -55 °C to +175 °C junction and storage
- Qualification: AEC-Q101 qualified, 100 % Rg and UIS tested
- Suffix: T1 = tape and reel (2,500 piece standard package) · BE3 = lead (Pb)-free and halogen-free, alternate manufacturing location
- Status: Last time buy - last order 23 August 2026, last shipment 22 February 2027 (PTN-SIL-013-2026, covers GE3 and BE3)
With both suffixes of the SQ4532AEY heading to end of life on the same date, franchised stock is finite and will not be replenished. GlobX sources the SQ4532AEY-T1_BE3 for OEM and EMS teams across Europe through a verified global supplier network, with ISO 9001 incoming inspection and anti-counterfeit checks, full traceability and a certificate of conformance on request. We can also quote the GE3 suffix and the SQ4532CEY-T1_GE3 replacement. Request a quote with your quantity and date-code requirements and we will respond within 24 hours.
Pricing & Availability for SQ4532AEY-T1_BE3
Products are delivered in packages of 2500 pieces each.
| DC / COO | QTY | IN STOCK | UNIT PRICE |
|---|---|---|---|
| 1 | (5000) | €1.000 | |
| - | (5000) | - | |
| - | (5000) | - |
Price Table (EUR)
| Quantity | Unit Price | EXT Price |
|---|---|---|
| 1 | 1,32 | |
| - | ||
| - |
Why Source SQ4532AEY-T1_BE3 from GlobX
FAQs
Frequently Asked Questions about SQ4532AEY-T1_BE3by Vishay
What is SQ4532AEY-T1_BE3?
SQ4532AEY-T1_BE3 is an automotive complementary MOSFET pair from Vishay Siliconix, supplied with the BE3 suffix that denotes an alternate manufacturing location. It combines one N-channel and one P-channel TrenchFET power MOSFET in a single SO-8 package, both rated at 30 V, delivering 7.3 A on the N-channel and -5.3 A on the P-channel at TC = 25 C. It is AEC-Q101 qualified, lead (Pb)-free and halogen-free, and supplied on tape and reel.
What is the difference between SQ4532AEY-T1_BE3 and SQ4532AEY-T1_GE3?
There is no electrical difference. Both use the same silicon die, the same datasheet and the same ratings. In Vishay's ordering code, T1 means tape and reel, E3 means lead (Pb)-free, and GE3 means lead-free and halogen-free (Green). BE3 is also Green but built at an alternate manufacturing location, so the practical difference is the fab and country of origin. A BE3 part can replace a GE3 or E3 part as a form, fit and function equivalent.
What are the key ratings of SQ4532AEY-T1_BE3?
The SQ4532AEY-T1_BE3 is rated at 30 V drain-source on the N-channel and -30 V on the P-channel, with a gate-source rating of +/-20 V. Maximum on-resistance is 0.031 Ohm (N-channel) and 0.070 Ohm (P-channel) at VGS = +/-10 V, rising to 0.042 Ohm and 0.190 Ohm at 4.5 V. Continuous drain current is 7.3 A and -5.3 A at TC = 25 C, with 3.3 W maximum power dissipation and a -55 C to +175 C junction temperature range.
Is SQ4532AEY-T1_BE3 obsolete?
The SQ4532AEY-T1_BE3 is on last time buy. Vishay product termination notice PTN-SIL-013-2026, issued 19 February 2026, lists both SQ4532AEY-T1_BE3 and SQ4532AEY-T1_GE3 as affected, with a last time buy date of 23 August 2026 and a last time ship date of 22 February 2027. This matters because the BE3 is often treated as a second source for the GE3: it is not an escape from the end of life, since the same notice covers both suffixes.
What is the replacement for SQ4532AEY-T1_BE3?
Vishay names SQ4532CEY-T1_GE3 as the replacement ordering code. Notice PTN-SIL-013-2026 states it uses identical silicon technology and the same silicon die design as the SQ4532AEY, with no change to the wafer fab location, and that device performance in the application will not be impacted. The only change is a conversion from gold (Au) to copper (Cu) bond wire for materials standardisation. AEC-Q101 qualification data for the replacement is available and PPAP can be supplied on request.
Is SQ4532AEY-T1_BE3 available at GlobX?
Yes. GlobX supplies the SQ4532AEY-T1_BE3 to OEM and EMS customers across Europe through a verified global supplier network, with ISO 9001 incoming inspection, anti-counterfeit checks and full traceability, plus a certificate of conformance on request. Because the part is on last time buy until 23 August 2026, availability is finite. GlobX can also quote the SQ4532AEY-T1_GE3 suffix and the SQ4532CEY-T1_GE3 replacement, with quotes returned within 24 hours.
