SQ4532AEY-T1_GE3 Supplier in Europe - Bulk & OEM Pricing MOSFETs

The SQ4532AEY-T1_GE3 is an automotive-grade complementary MOSFET pair from Vishay Siliconix that combines one N-channel and one P-channel TrenchFET power MOSFET in a single SO-8 package, with both channels rated at 30 V and delivering 7.3 A (N-channel) and -5.3 A (P-channel) continuous drain current at T_C = 25 °C. Pairing both polarities in one package replaces two discrete MOSFETs in load-switch and high-side/low-side drive circuits, saving board area while keeping full AEC-Q101 automotive qualification.

The N-channel side is specified at 0.031 Ω maximum on-resistance at V_GS = 10 V (0.042 Ω at 4.5 V) and the P-channel side at 0.070 Ω (0.190 Ω at 4.5 V), with a ±20 V gate-source rating, 3.3 W maximum power dissipation and a -55 °C to +175 °C junction temperature range. Every device is 100 % R_g and UIS tested, and the GE3 suffix denotes a lead (Pb)-free and halogen-free finish. Parts ship on tape and reel, with a manufacturer standard package of 2,500 pieces.

Last time buy status and the SQ4532CEY replacement

Vishay product termination notice PTN-SIL-013-2026, issued 19 February 2026, converts the SQ4532AEY from gold (Au) to copper (Cu) bond wire and introduces SQ4532CEY-T1_GE3 as the replacement ordering code. Vishay states the replacement uses identical silicon technology and the same silicon die design, that device performance in the application will not be impacted, and that the wafer fab location does not change. The last time buy date is 23 August 2026 and the last time ship date is 22 February 2027.

One detail catches buyers out: the notice covers both SQ4532AEY-T1_GE3 and SQ4532AEY-T1_BE3, so moving to the SQ4532AEY-T1_BE3, a form, fit and function equivalent built at an alternate manufacturing location, buys stock but does not avoid the end of life. Teams with automotive PPAP obligations generally either secure last-time-buy quantities now or start qualifying the SQ4532CEY. Our guides to sourcing obsolete electronic components and second sourcing electronic components cover how to plan and verify either route.

Typical applications

• Automotive load switches and high-side/low-side drive on 12 V rails, where the 30 V rating gives headroom over nominal battery voltage
• Body control modules, interior lighting and HVAC actuator drive
• Compact half-bridge and H-bridge legs for small DC motors
• Reverse-polarity and power-path protection needing both polarities in one footprint
• Last-time-buy builds and legacy automotive assemblies that must stay on the qualified SQ4532AEY die

Key specifications

• Configuration: Complementary N-channel plus P-channel MOSFET pair (dual), TrenchFET
• Drain-source voltage: 30 V (N-channel) / -30 V (P-channel)
• On-resistance (max): 0.031 Ω N-channel, 0.070 Ω P-channel at V_GS = ±10 V
• Continuous drain current: 7.3 A (N-channel) / -5.3 A (P-channel) at T_C = 25 °C
• Gate-source voltage: ±20 V
• Power dissipation: 3.3 W
• Package: SO-8 Dual (8-SOIC, 3.90 mm body), surface mount
• Temperature: -55 °C to +175 °C junction and storage
• Qualification: AEC-Q101 qualified, 100 % R_g and UIS tested, lead (Pb)-free and halogen-free
• Marking code: Q4532A
• Status: Last time buy - last order 23 August 2026, last shipment 22 February 2027 (PTN-SIL-013-2026)

Because the SQ4532AEY-T1_GE3 is heading to end of life, franchised stock is finite and will not be replenished once the last-time-buy window closes. GlobX sources this part for OEM and EMS teams across Europe through a verified global supplier network, with ISO 9001 incoming inspection and anti-counterfeit checks, full traceability and a certificate of conformance on request. We can also quote the SQ4532CEY-T1_GE3 replacement. Request a quote with your quantity and date-code requirements and we will respond within 24 hours.