The Infineon IPA60R360P7 is a 600 V CoolMOS P7 superjunction MOSFET, a dependable workhorse in switch-mode power supplies, lighting drivers and motor control across European industry. For German and EU design and procurement teams, the real questions are not just the datasheet numbers, but which package to use, what to do if it goes on allocation, and where to source it quickly with EU delivery. This guide covers all three.
What is the Infineon CoolMOS P7 (IPA60R360P7)?
The IPA60R360P7 is an N-channel 600 V superjunction (SJ) power MOSFET from Infineon Technologies, part of the 7th-generation CoolMOS P7 platform and the successor to CoolMOS P6. The P7 series balances high efficiency with ease of design: its low gate charge (QG) enables fast switching and lower losses, while a low on-resistance keeps conduction losses down.
| Parameter | Value |
|---|---|
| Drain-source voltage (VDS) | 600 V |
| Continuous drain current (ID) | 9 A |
| On-resistance RDS(on) @25°C, VGS=10 V | 300 mΩ typ, 360 mΩ max |
| RDS(on) @150°C junction | 702 mΩ typ |
| Gate charge QG (typ) | ~13 nC |
| Operating temperature | -55°C to +150°C |
| Package (this variant) | TO-220 FullPAK |
All figures are from Infineon's IPA60R360P7 datasheet (Rev. 2.3). The 360 in the part number is the maximum on-resistance, not the typical one, and it more than doubles at a hot junction, so size conduction losses on the 150°C figure. As of September 2026, Infineon lists the IPA60R360P7 as "active and preferred".
Where the CoolMOS P7 600 V is used
The 600 V CoolMOS P7 is a general-purpose family targeting everything from low-power SMPS to high-power systems. Typical European applications include PFC and LLC stages in industrial and server power supplies, LED lighting drivers, EV and battery chargers, solar inverters, and motor-control front ends, exactly the high-reliability, high-efficiency designs that dominate the German industrial and automotive base.
Package variants: same silicon, different footprint
Infineon offers the 360 mΩ / 600 V die in five packages with the same 360 mΩ maximum RDS(on) and 13 nC gate charge, but they do not dissipate the same power. The isolated FullPAK has a junction-to-case thermal resistance of 5.61 °C/W and a 22 W power rating, against 3.04 °C/W and 41 W for the standard TO-220 IPP60R360P7. That is the price of skipping the insulating pad, so recheck the heatsink before swapping one for the other.
| Part | Package | Best for |
|---|---|---|
| IPA60R360P7 | TO-220 FullPAK (isolated) | Isolated tab, easy heatsinking |
| IPP60R360P7 | TO-220 | Standard through-hole |
| IPB60R360P7 | D2PAK | Surface-mount power |
| IPD60R360P7 | DPAK | Smaller surface-mount footprint |
| IPN60R360P7S | SOT-223 | Compact SMD (rated from -40°C, not -55°C) |
IPA60R360P7 alternatives and equivalents
The closest alternatives are the TO-220 IPP60R360P7 if your board can take a non-isolated tab, or a neighbouring RDS(on) in the same FullPAK. Qualify every alternative on a form-fit-function basis, using our cross-reference checklist:
- Other RDS(on) in the P7 family: IPA60R180P7 (180 mΩ max, 18 A, but 25 nC gate charge) or IPA60R600P7 (600 mΩ max, 6 A, 9 nC) when you can flex the current rating.
- Previous generation: the closest CoolMOS P6 part is the IPA60R380P6 (380 mΩ max, 6.5 A), still listed as active. There is no IPA60R360P6, so treat any offer under that number as a red flag.
- Next generation: Infineon launched the 600 V CoolMOS 8 family in June 2024 as the successor to P7, C7, CFD7 and others, with 33% lower gate charge than P7. It suits new designs, not a like-for-like swap in a qualified product.
- Cross-manufacturer 600 V superjunction: STMicroelectronics MDmesh, onsemi SuperFET III, or Toshiba DTMOS in the same RDS(on) class. Re-verify gate charge, thermal behaviour and footprint before committing.
Switching to an alternate part is a classic shortage response. If your MOSFET is currently rationed, read our guide on electronic component allocation first.
How to choose the right CoolMOS P7
Choose by four things in this order: current and conduction loss, gate charge, package thermals, and EU compliance paperwork.
- Match RDS(on) to your current and losses. Lower RDS(on) (e.g. 180 mΩ) cuts conduction losses but costs more and adds capacitance.
- Mind the gate charge for switching designs. The P7's low QG suits hard- and soft-switched topologies (PFC, LLC).
- Pick the package for thermals and assembly. TO-220 FullPAK for isolated mounting; D2PAK for SMT lines.
- Confirm EU compliance. Ensure RoHS and REACH documentation for the European market, see our RoHS compliance guide.
Sourcing the IPA60R360P7 in Europe
The quickest way to source the IPA60R360P7 in Europe is from verified stock with a traceable date code, because as of September 2026 power semiconductors are one of the categories still running long factory lead times (see our lead times report). When the authorised channel is constrained, a verified independent distributor with real EU stock keeps your line running, see our playbook on sourcing electronic components during shortages.
Choosing between a power MOSFET and an IGBT for your stage? See our guide on MOSFET vs IGBT for the key differences and how to pick the right switch.
Buy the IPA60R360P7 from GlobX
GlobX is a Europe-based independent distributor near Frankfurt, Germany. We currently hold IPA60R360P7XKSA1 in stock (TO-220 FullPAK), with ISO 9001 quality checks, full traceability and most orders shipping within 24-48 hours across the EU. Need a different RDS(on), package, or a qualified alternative? Browse our Infineon stock or the full components catalogue.
Need pricing or a compliant 600 V MOSFET fast? Request a 24-hour quote from the GlobX sourcing team.
