SKU IPD30N03S2L20 Category

IPD30N03S2L-20

Manufacturer: Infineon
Category:
Discrete Semiconductor Products
transistor
FETs, MOSFETs
Single FETs, MOSFETs
Data sheet: Get PDF File
Date code: 22+
Description: MOSFET N-CH 30V 30A TO252-31

Available Quantity: 79000

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Product Specification Parameters
TYPE
DESCRIPTION
Category
Discrete Semiconductor Products
transistor
FETs, MOSFETs
Single FETs, MOSFETs
Mr
Infineon Technologies
Series
OptiMOS™
Package.Package
Tape & Reel (TR)
Cut Tape (CT)
Digi Reel®
Product Status
Active
FET type
N Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current – Continuous Drain (Id) @ 25°C
30A (TC)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
530pF @ 25V
FET feature
–
Power Dissipation (Max)
60W (TC)
Operating temperature
-55°C ~ 175°C (TJ)
Mounting type
Surface mount
Supplier Device Package
PG-TO252-3-11
Package/Case
TO-252-3, DPak (2 leads + tab), SC-63
Base product number
IPD30N03

 

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